?2004 Fairchild Semiconductor Corporation
BAV70 / 74, Rev. D1
BAV70 / 74
Small Signal Diode
Absolute Maximum Ratings *
TA
= 25
°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Value Units
VRRM
Maximum Repetitive Reverse Voltage BAV70
BAV74
70
50
V
V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
TSTG
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature 150
°C
Symbol Parameter Value Units
PD
Power Dissipation 350 mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
Symbol Parameter Test Conditions Min. Max. Units
VR
Breakdown Voltage BAV70
BAV74
IR
= 100
μA
75
V
IR
= 5.0
μA
50
V
VF
Forward Voltage BAV70
BAV74
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
IF
= 100mA
715
855
1.0
1.25
1.0
mV
mV
V
V
V
IR
Reverse Leakage BAV70
BAV74
VR
= 25V, T
A
= 150
°C
60
μA
VR
= 70V
5.0
μA
VR
= 70V, T
A
= 150
°C
100
μA
VR
= 50V
VR
= 50V, T
A
= 150
°C
100
μA
100
nA
CT
Total Capacitance BAV70
BAV74
VR
= 0V, f = 1.0MHz
VR
= 0V, f = 1.0MHz
1.5
2.0
pF
pF
trr
Reverse Recovery Time BAV70
BAV74
IF
= I
R
= 10mA, I
RR
= 1.0mA,
RL
= 100
?
IF
= I
R
= 10mA, I
RR
= 1.0mA,
4.0
ns
RL
= 100
?
6.0
ns
BAV70 / 74
Connection Diagram
12
3
A4
1
2
3
SOT-23
3
1
2
BAV70 A4 BAV74 JA
MARKING
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